oh004 gaas hall element magnetic sensor n features l hall voltage : typ. 150mv(v c = 6v, b= 0.1t) l input resistance : typ. 0.85k w l satisfactory linearity of gaas hall voltage for the magnetic field l small temperature coefficient of the hall voltage : b C 0.06%/?c l mini type (4-pin) package with positioning projection. automatic insertion with magazine package possible n applications l various hall motor (vcr, player, vd, cd, and fdd) l automotive equipment l industrial equipment n absolute maximum ratings (ta= 25?c) 1 : v h output C side 2 : v c input C side 3 : v h output + side 4 : v c input + side mini type package (4-pin) with positioning projection unit : mm C 5 to + 5 + 2 to +12 C 2 to C12 hq 130 to 158 4hq hr 142 to 170 4hr iq 130 to 158 4iq ir 142 to 170 4ir kq 130 to 158 4kq kr 142 to 170 4kr class v h (mv) v ho /v h (%) marking symbol ? v h + ? + ? v h C ? * 1 v h = 2 * 2 unbalance ratio is a percentage of v ho for v h . * 3 the linearity g of v h is a percentage of the cumulative sensitivity of k h1 and k h5 measured at b= 0.1t and 0.5t for the average value. k h5 C k h1 v h g = ( percentage of the cumulative sensitivity k h =) 1/2 (k h1 + k h5 ) i c b * 4 v h , v ho /v h rank classification unit mv % k w k w %/?c %/?c % condition v c = 6v, b= 0.1t v c = 6v, b= 0t/b= 0.1t i c =1ma, b= 0t i c =1ma, b= 0t i c = 6ma, b= 0.1t i c =1ma, b= 0t i c = 6ma, b= 0.1t/0.5t symbol v h * 1, 4 v ho /v h * 2, 4 r in r out b a g * 3 rating 12 150 C 30 to +125 C 55 to +125 unit v mw ?c ?c n electrical characteristics (ta= 25?c) parameter control voltage power dissipation operating ambient temperature storage temperature symbol v c p d t opr t stg gaas hall elements ma111 parameter hall voltage unequilibrium ratio input resistance output resistance temperature coefficient of hall voltage temperature coefficient of input resistance linearity of hall voltage min 130 0.50 typ 150 0.85 max 170 12 5 C 0.06 0.3 2 marking symbol : 4 1.5 0.2 ?.0 0.025 0.5 0.1 1.9 0.2 2.9 0.2 1.45 0.2 (0.5r) 0.8 0.95 0.95 0.4 0.2 0.4 0.2 2 3 1 4 1.1 +0.2 _ 0.1 0.16 +0.1 _ 0.06 2.8 +0.2 _ 0.3 0~0.1 +0.1 _ 0.05 0.4 0.5r 0.65 0.15 0.65 0.15
p d C ta r in C ta v h C ta v h C b v h C v c v h C i c n typical drive circuit gaas hall elements oh004 +9v +v +9v ?v ? ?v 31 2 4 + ambient temperature ta ( ?c ) power dissipation p d ( mw ) 0 40 80 120 160 200 180 140 100 60 20 02040 80 60 140 120 100 160 ?40 ambient temperature ta ( ?c ) hall voltage v h ( mv ) 0 0 40 80 120 40 80 120 160 200 240 b=0.1t i c =6ma ambient temperature ta ( ?c ) input resistance r in ( ) 0 ?0 0 40 80 120 800 1600 1400 1200 1000 600 400 200 b=0 i c =1ma magnetic flux density b ( t ) hall voltage v h ( mv ) v c =6v ta=25?c 0 0 1.2 0.2 1.0 0.4 0.6 0.8 800 400 1600 1200 600 200 1000 1400 control current i c ( ma ) hall voltage v h ( mv ) b=0.1t ta=25?c 0 0 4 12 16 2 6 10 14 8 40 80 120 160 200 240 280 320 control voltage v c ( v ) hall voltage v h ( mv ) b=0.1t ta=25?c 0 0 4 12 16 2 6 10 14 8 40 80 120 160 200 240 280 320
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